Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN
- Cite this article as:
- Koide, Y., Maeda, T., Kawakami, T. et al. Journal of Elec Materi (1999) 28: 341. doi:10.1007/s11664-999-0037-7
Effects of annealing ambient of an oxygen and nitrogen mixed gas on the electrical properties were studied for Au-based ohmic contacts (NiAu, CoAu, CuAu, PdAu, and PtAu) to p-type GaN. Addition of oxygen to the nitrogen gas reduced the specific contact resistances (ρc) and resitivities of the p-GaN epilayers (ρs) of the contacts after annealing at temperatures of 500–600°C. The microstructural analysis at the p-GaN/metal interfaces did not detect the heterostructural intermediate semiconductor layer at the GaN/metal interfaces. The reason for reduction of both the ρc and ρs values by the oxygen gas addition was believed to be due to formation of the p-GaN epilayer with high hole concentrations, caused by removal of hydrogen atoms which bonded with Mg atoms.