Temperature measurement in a silicon carbide light emitting diode by raman scattering
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Raman spectra of the transverse-optic phonon mode from a light-emitting layer of a SiC diode have been measured. The phonon peak broadens and shifts to lower frequency with the rise of temperature when the injected current is increased. The frequency shift was compared with a result for bulk reference measured separately at various temperatures. We found that the temperature of the light-emitting layer reached 350°C at a current density of ∼200 A/cm2.
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- Temperature measurement in a silicon carbide light emitting diode by raman scattering
Journal of Electronic Materials
Volume 28, Issue 3 , pp 141-143
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- Light-emitting diode (LED)
- Raman scattering
- silicon carbide (SiC)
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