, Volume 28, Issue 3, pp 141-143

Temperature measurement in a silicon carbide light emitting diode by raman scattering

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

Raman spectra of the transverse-optic phonon mode from a light-emitting layer of a SiC diode have been measured. The phonon peak broadens and shifts to lower frequency with the rise of temperature when the injected current is increased. The frequency shift was compared with a result for bulk reference measured separately at various temperatures. We found that the temperature of the light-emitting layer reached 350°C at a current density of ∼200 A/cm2.