Journal of Electronic Materials

, Volume 28, Issue 3, pp 141–143

Temperature measurement in a silicon carbide light emitting diode by raman scattering


  • H. Harima
    • Department of Applied PhysicsOsaka University
  • T. Hosoda
    • Department of Applied PhysicsOsaka University
  • S. Nakashima
    • Department of Applied PhysicsOsaka University
Special Issue Paper

DOI: 10.1007/s11664-999-0003-4

Cite this article as:
Harima, H., Hosoda, T. & Nakashima, S. Journal of Elec Materi (1999) 28: 141. doi:10.1007/s11664-999-0003-4


Raman spectra of the transverse-optic phonon mode from a light-emitting layer of a SiC diode have been measured. The phonon peak broadens and shifts to lower frequency with the rise of temperature when the injected current is increased. The frequency shift was compared with a result for bulk reference measured separately at various temperatures. We found that the temperature of the light-emitting layer reached 350°C at a current density of ∼200 A/cm2.

Key words

Light-emitting diode (LED)Raman scatteringsilicon carbide (SiC)

Copyright information

© TMS-The Minerals, Metals and Materials Society 1999