Journal of Electronic Materials

, Volume 27, Issue 4, pp 233–237

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

  • Ok-Hyun Nam
  • Tsvetanka S. Zheleva
  • Michael D. Bremser
  • Robert F. Davis
Special Issue Paper

DOI: 10.1007/s11664-998-0393-8

Cite this article as:
Nam, O., Zheleva, T.S., Bremser, M.D. et al. Journal of Elec Materi (1998) 27: 233. doi:10.1007/s11664-998-0393-8

Abstract

Lateral epitaxial growth and coalescence of GaN regions over SiO2 masks previously deposited on GaN/AlN/6H-SiC(0001) substrates and containing 3 µm wide rectangular windows spaced 7 µm apart have been achieved. The extent and microstructural characteristics of these regions of lateral overgrowth were a complex function of stripe orientation, growth temperature, and triethylgallium (TEG) flow rate. The most successful growths were obtained from stripes oriented along 〈1 \( < 1\bar 100 > \)00〉 at 1100°C and a TEG flow rate of 26 µmol/min. A density of ∼109 cm−2 threading dislocations, originating from the underlying GaN/AlN interface, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The surfaces of the coalesced layers had a terrace structure and an average root mean square roughness of 0.26 nm.

Key words

Coalescencegallium nitride (GaN)lateral epitaxial overgrowthmetalorganic vapor phase epitaxy (MOVPE)selective growth

Copyright information

© TMS-The Minerals, Metals and Materials Society 1998

Authors and Affiliations

  • Ok-Hyun Nam
    • 1
  • Tsvetanka S. Zheleva
    • 1
  • Michael D. Bremser
    • 1
  • Robert F. Davis
    • 1
  1. 1.Department of Materials Science and EngineeringNorth Carolina State UniversityRaleigh