Journal of Electronic Materials

, Volume 27, Issue 10, pp 1088–1094

Chemical mechanical polishing of polymer films

Authors

  • Dan Towery
    • AlliedSignal Inc., Advanced Microelectronic Materials
  • Michael A. Fury
    • AlliedSignal Inc., Advanced Microelectronic Materials
Special Issue Paper

DOI: 10.1007/s11664-998-0142-z

Cite this article as:
Towery, D. & Fury, M.A. Journal of Elec Materi (1998) 27: 1088. doi:10.1007/s11664-998-0142-z

Abstract

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO2) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.

Key words

Chemical-mechanical polishing (CMP)FLARE™ 2.0low-κ dielectric

Copyright information

© TMS-The Minerals, Metals and Materials Society 1998