Journal of Electronic Materials

, Volume 27, Issue 7, pp 915–917

High selectivity plasma etching of InN over GaN

  • Hyun Cho
  • J. Hong
  • T. Maeda
  • S. M. Donovan
  • C. R. Abernathy
  • S. J. Pearton
  • R. J. Shul
  • J. Han
Regular Issue Paper

DOI: 10.1007/s11664-998-0118-z

Cite this article as:
Cho, H., Hong, J., Maeda, T. et al. Journal of Elec Materi (1998) 27: 915. doi:10.1007/s11664-998-0118-z

Abstract

Etch selectivities for InN over GaN as high as 40 and 100 are achieved in BBr3/Ar and BI3/Ar, respectively, under inductively coupled plasma conditions. Previous work on Cl2-based plasma chemistries has produced selectivity in the reverse direction, i.e., GaN over InN, and therefore the introduction of these new Br2- and I2-based mixtures facilitates device fabrication involving double heterostructures of GaN/InxGa1−xN/GaN. Selectivities up to 10 for InN over the common mask materials SiO2 and SiNx were obtained in both BI3 and BBr3.

Key words

GaN InN selectivity plasma etching 

Copyright information

© TMS-The Minerals, Metals and Materials Society 1998

Authors and Affiliations

  • Hyun Cho
    • 1
  • J. Hong
    • 1
  • T. Maeda
    • 1
  • S. M. Donovan
    • 1
  • C. R. Abernathy
    • 1
  • S. J. Pearton
    • 1
  • R. J. Shul
    • 3
  • J. Han
    • 3
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville
  2. 2.Fujitsu LaboratoriesKanagawaJapan
  3. 3.Sandia National LaboratoriesAlbuquerque

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