Journal of Electronic Materials

, Volume 26, Issue 6, pp 738–744

New developments in CdTe and CdZnTe detectors for X and γ-ray applications

  • L. Verger
  • J. P. Bonnefoy
  • F. Glasser
  • P. Ouvrier-Buffet
Article

DOI: 10.1007/s11664-997-0225-2

Cite this article as:
Verger, L., Bonnefoy, J.P., Glasser, F. et al. Journal of Elec Materi (1997) 26: 738. doi:10.1007/s11664-997-0225-2

Abstract

There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm2 with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm3 CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.

Key words

CdTe detectorsCdZnTe detectorspulse height correction methodx- and γ-ray applicationsx-ray imager

Copyright information

© The Metallurgical of Society of AIME 1997

Authors and Affiliations

  • L. Verger
    • 1
  • J. P. Bonnefoy
    • 1
  • F. Glasser
    • 1
  • P. Ouvrier-Buffet
    • 1
  1. 1.LETI (CEA-Technologies Avancées)—DSYS/CEA GrenobleMartyrsFrance