Journal of Electronic Materials

, Volume 26, Issue 3, pp 151–159

Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

  • Weimin Si
  • Michael Dudley
  • Hua Shuang Kong
  • Joe Sumakeris
  • Calvin Carter
Article

DOI: 10.1007/s11664-997-0142-4

Cite this article as:
Si, W., Dudley, M., Shuang Kong, H. et al. Journal of Elec Materi (1997) 26: 151. doi:10.1007/s11664-997-0142-4

Abstract

Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from (0001), as well as (1 100) and (1120) oriented substrates were used. For epilayers grown on substrates misoriented by 3.5° from (0001) toward <1120>, the triangular inclusions were identified as consisting of two 3C-SiC structural configurations which are related to each other by a 180° rotation about the [111] axis. The epitaxial relationships between the 3C inclusions and the 4H-SiC epilayers (or substrates) were also determined. No evidence was found for the nucleation of 3C-SiC inclusions at superscrew dislocations (along the [0001] axis) in the 4H-SiC substrates. Increasing the off-axis angle of the substrates from 3.5 to 6.5° was found to greatly suppress the formation of the triangular inclusions. In the case of substrates misoriented by 8.0° from (0001) toward <1120>, the triangular inclusions were virtually eliminated. The crystalline quality of 4H-SiC epilayers grown on the substrates misoriented by 8.0° from (0001) was very good. For the (1100) and (1120) samples, there is no indication of 3C-SiC inclusions in the epilayers. Possible formation mechanisms and the morphology of 3C-SiC inclusions are discussed.

Key words

3C-SiC 4H-SiC, epitaxy Synchrotron white beam x-ray topography (SWBXT) 

Copyright information

© The Metallurgical of Society of AIME 1997

Authors and Affiliations

  • Weimin Si
    • 1
  • Michael Dudley
    • 1
  • Hua Shuang Kong
    • 2
  • Joe Sumakeris
    • 2
  • Calvin Carter
    • 2
  1. 1.Department of Materials Science and EngineeringState University of New York at Stony BrookNY
  2. 2.Cree Research, Inc.Durham

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