Journal of Electronic Materials

, Volume 25, Issue 11, pp 1709–1714

Ohmic contacts to n-type GaN

  • Stephen Miller
  • Paul H. Holloway
Article

DOI: 10.1007/s11664-996-0026-z

Cite this article as:
Miller, S. & Holloway, P.H. Journal of Elec Materi (1996) 25: 1709. doi:10.1007/s11664-996-0026-z

Abstract

Ohmic contacts to n-GaN using Ag, Au, TiN, Au/Ti, Au/Mo/Ti, and Au/Si/Ti have been studied. The Fermi level of GaN appears to be unpinned, and metals and compounds with work functions less than the electron affinity resulted in ohmic contacts. Reactively sputter deposited TiN was ohmic as deposited. However, Au/Ti, Au/Mo/Ti, and Au/Si/Ti required heat treatments to form ohmic contacts, with the best being an RTA at 900°C. Ag and Au were shown to diffuse across the GaN surface at T>500°C; therefore, they are unstable, poor ohmic contact metallizations as single metals. The other contact schemes were thermally stable up to 500°C for times of 30 min.

Key words

GaN Ohmic contacts Titanium 

Copyright information

© The Metallurgical of Society of AIME 1996

Authors and Affiliations

  • Stephen Miller
    • 1
  • Paul H. Holloway
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville

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