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Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

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Abstract

In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

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Authors and Affiliations

  1. Electrical Engineering Department, University at Buffalo, Buffalo, NY, 14260, USA

    Ye Jia & Uttam Singisetti

  2. Chemistry Department, University at Buffalo, Buffalo, NY, 14260, USA

    Joshua S. Wallace &  Joseph A. Gardella Jr.

  3. Integrated Nanostructured Systems Initiative, University at Buffalo, Buffalo, NY, 14260, USA

    Yueling Qin

  4. SVT Associates, Eden Prairie, MN, 55344, USA

    Amir M. Dabiran

Authors
  1. Ye Jia
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  2. Joshua S. Wallace
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  3. Yueling Qin
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  6. Uttam Singisetti
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Correspondence to Ye Jia.

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Jia, Y., Wallace, J.S., Qin, Y. et al. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride. J. Electron. Mater. 45, 2013–2018 (2016). https://doi.org/10.1007/s11664-015-4175-9

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  • DOI: https://doi.org/10.1007/s11664-015-4175-9

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