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Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

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Abstract

Growth of Al x Ga1−x N layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the formation of coalesced c-plane-oriented Al x Ga1−x N layers with reduced crack density. The orientation of parasitic crystallites in the honeycomb openings is investigated using scanning electron microscopy and electron back-scatter diffraction. Crystallites with their [\( \bar{1} \) \( \bar{1} \).0] and [52.3] directions parallel to the vertical growth direction of the Al0.3Ga0.7N layer are observed and successfully overgrown by a 20-μm-thick fully coalesced c-plane-oriented layer.

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Authors and Affiliations

  1. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany

    E. Richter, S. Fleischmann, S. Hagedorn, W. John, A. Mogilatenko, D. Prasai, U. Zeimer, M. Weyers & G. Tränkle

  2. Institut fuer Physik, Humboldt Universitaet zu Berlin, Newtonstr. 15, 12489, Berlin, Germany

    A. Mogilatenko

  3. Bruker Nano GmbH, Am Studio 2D, 12489, Berlin, Germany

    D. Goran

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  1. E. Richter
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  2. S. Fleischmann
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  3. D. Goran
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  4. S. Hagedorn
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  5. W. John
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  6. A. Mogilatenko
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  7. D. Prasai
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  8. U. Zeimer
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  9. M. Weyers
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  10. G. Tränkle
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Correspondence to E. Richter.

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Richter, E., Fleischmann, S., Goran, D. et al. Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates. J. Electron. Mater. 43, 814–818 (2014). https://doi.org/10.1007/s11664-013-2871-x

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  • DOI: https://doi.org/10.1007/s11664-013-2871-x

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