Journal of Electronic Materials

, Volume 43, Issue 2, pp 341–347

Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs


    • Department of Aerospace and Mechanical EngineeringUniversity of Notre Dame
  • Bruce Claflin
    • Air Force Research LaboratorySensors Directorate Wright–Patterson Air Force Base
  • Debdeep Jena
    • Department of Electrical EngineeringUniversity of Notre Dame
  • Mihir Sen
    • Department of Aerospace and Mechanical EngineeringUniversity of Notre Dame
  • Ramakrishna Vetury
    • Defense and Power, RF Micro Devices, Inc.
  • Donald Dorsey
    • Materials and Manufacturing Directorate, AFRL/RXANWright–Patterson Air Force Base

DOI: 10.1007/s11664-013-2841-3

Cite this article as:
Ferrer-Pérez, J.A., Claflin, B., Jena, D. et al. Journal of Elec Materi (2014) 43: 341. doi:10.1007/s11664-013-2841-3


Nitride-based semiconductors are gaining importance not only for high-power applications but also for high-temperature electronic devices. Using photoluminescence (PL) techniques, it is now possible to simultaneously determine the temperatures of the lattice and hot electrons in these devices. Therefore, it is possible to use PL mapping measurements to derive temperature profiles for electrons and the lattice in the active region of an operating device with a single set of measurements. This work presents an experimental process to construct such spatially resolved temperature maps for a planar semiconductor device under bias and applies this approach to a specific example using the conductive channels of a biased AlGaN/GaN high-electron-mobility transistor. Studying the temperature distribution inside the conductive channels will help understand how electrons flowing in the device interact with the lattice as well as the process of heat generation within the device.


Hot spotshot-electron temperaturelattice temperaturephotoluminescenceGaN HEMTheat transfer

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© TMS 2013