Journal of Electronic Materials

, Volume 43, Issue 2, pp 341-347

First online:

Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

  • Jorge A. Ferrer-PérezAffiliated withDepartment of Aerospace and Mechanical Engineering, University of Notre Dame Email author 
  • , Bruce ClaflinAffiliated withAir Force Research Laboratory, Sensors Directorate Wright–Patterson Air Force Base
  • , Debdeep JenaAffiliated withDepartment of Electrical Engineering, University of Notre Dame
  • , Mihir SenAffiliated withDepartment of Aerospace and Mechanical Engineering, University of Notre Dame
  • , Ramakrishna VeturyAffiliated withDefense and Power, RF Micro Devices, Inc.
  • , Donald DorseyAffiliated withMaterials and Manufacturing Directorate, AFRL/RXAN, Wright–Patterson Air Force Base

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Nitride-based semiconductors are gaining importance not only for high-power applications but also for high-temperature electronic devices. Using photoluminescence (PL) techniques, it is now possible to simultaneously determine the temperatures of the lattice and hot electrons in these devices. Therefore, it is possible to use PL mapping measurements to derive temperature profiles for electrons and the lattice in the active region of an operating device with a single set of measurements. This work presents an experimental process to construct such spatially resolved temperature maps for a planar semiconductor device under bias and applies this approach to a specific example using the conductive channels of a biased AlGaN/GaN high-electron-mobility transistor. Studying the temperature distribution inside the conductive channels will help understand how electrons flowing in the device interact with the lattice as well as the process of heat generation within the device.


Hot spots hot-electron temperature lattice temperature photoluminescence GaN HEMT heat transfer