, Volume 42, Issue 1, pp 26-32
Date: 10 Nov 2012

Microstructure of GaN1−x Bi x

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Abstract

In this paper we describe detailed transmission electron microscopy studies of GaN1−x Bi x with 0.05 < x < 0.18 grown by low-temperature molecular beam epitaxy under Ga-rich conditions. Microstructural transformation from columnar growth separated by thin amorphous areas in the films with lowest Bi content (5%) to pseudo-amorphous structure with crystalline grains embedded in the amorphous matrix in the samples with higher Bi content (13% to 18%) was observed. In addition, metallic Bi segregation occurred in the samples with the highest Bi concentration. An abrupt decrease in absorption edge energy is found in samples with higher Bi content.