, Volume 41, Issue 8, pp 2184-2192
Date: 10 May 2012

Fabrication and Circuit Modeling of NMOS Inverter Based on Quantum Dot Gate Field-Effect Transistors

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Abstract

This paper presents the fabrication of a negative-channel metal–oxide–semiconductor (NMOS) inverter based on quantum dot gate field-effect transistors (QDG-FETs). A QDG-FET produces one intermediate state in its transfer characteristic. NMOS inverters based on a QDG-FET produce three states in their transfer characteristic. The generation of the third state in the inverter characteristic makes this a promising circuit element for multivalued logic implementation. A circuit simulation result based on the Berkley simulation (BSIM) circuit model of the QDG-FET is also presented in this paper, predicting the fabricated device characteristic.