Journal of Electronic Materials

, Volume 41, Issue 7, pp 1931–1935

Dislocation Reduction by Glide in Epitaxial IV–VI Layers on Si Substrates

Article

DOI: 10.1007/s11664-012-2031-8

Cite this article as:
Zogg, H. Journal of Elec Materi (2012) 41: 1931. doi:10.1007/s11664-012-2031-8

Abstract

It is explained with a simple model why the reduction of threading dislocation (TD) densities in epitaxial lattice and thermal expansion mismatched IV–VI layers such as PbSe(111) on Si(111) substrates follows a 1/h2 dependence where h is the thickness of the layer. This is in contrast to the 1/h dependence for III–V and II–VI layers grown on mismatched substrates. The 1/h2 dependence results since the thermal mismatch strain is mainly reduced by glide and reactions of the TD in their main {100}-type glide system of the NaCl-type IV–VI semiconductors. In addition, multiple thermal cycles lead to further reduction of the TD densities by glide and fusion since fusion does not cause dislocation blocking.

Keywords

Molecular beam epitaxyheteroepitaxydislocation reductionlead chalcogenides

Copyright information

© TMS 2012

Authors and Affiliations

  1. 1.Thin Film Physics GroupETH ZurichZurichSwitzerland