Journal of Electronic Materials

, Volume 40, Issue 5, pp 1266–1270

Bi2Te3-Sb2Te3 Superlattices Grown by Nanoalloying

Authors

    • Fraunhofer-Institute for Physical Measurement Techniques (IPM)
  • M. Winkler
    • Fraunhofer-Institute for Physical Measurement Techniques (IPM)
  • S. Buller
    • Institute for Inorganic ChemistryCAU Kiel
  • W. Bensch
    • Institute for Inorganic ChemistryCAU Kiel
  • U. Schürmann
    • Synthesis and Real Structure, Institute for Material ScienceCAU Kiel
  • L. Kienle
    • Synthesis and Real Structure, Institute for Material ScienceCAU Kiel
  • H. Böttner
    • Fraunhofer-Institute for Physical Measurement Techniques (IPM)
Article

DOI: 10.1007/s11664-011-1578-0

Cite this article as:
König, J.D., Winkler, M., Buller, S. et al. Journal of Elec Materi (2011) 40: 1266. doi:10.1007/s11664-011-1578-0

Abstract

In this work, Bi2Te3-Sb2Te3 superlattices were prepared by the nanoalloying approach. Very thin layers of Bi, Sb, and Te were deposited on cold substrates, rebuilding the crystal structure of V2VI3 compounds. Nanoalloyed super- lattices consisting of alternating Bi2Te3 and Sb2Te3 layers were grown with a thickness of 9 nm for the individual layers. The as-grown layers were annealed under different conditions to optimize the thermoelectric parameters. The obtained layers were investigated in their as-grown and annealed states using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) spectroscopy, transmission electron microscopy (TEM), and electrical measurements. A lower limit of the elemental layer thickness was found to have c-orientation. Pure nanoalloyed Sb2Te3 layers were p-type as expected; however, it was impossible to synthesize p-type Bi2Te3 layers. Hence the Bi2Te3-Sb2Te3 superlattices consisting of alternating n- and p-type layers showed poor thermoelectric properties.

Keywords

ThermoelectricsBi2Te3-Sb2Te3 superlatticesnanoalloying
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© TMS 2011