Journal of Electronic Materials

, Volume 40, Issue 5, pp 1062–1066

Thermoelectric Properties of Sb-Doped Mg2Si0.3Sn0.7

  • Wei Liu
  • Qiang Zhang
  • Xinfeng Tang
  • Han Li
  • Jeff Sharp
Article

DOI: 10.1007/s11664-011-1541-0

Cite this article as:
Liu, W., Zhang, Q., Tang, X. et al. Journal of Elec Materi (2011) 40: 1062. doi:10.1007/s11664-011-1541-0

Abstract

Mg2(Si0.3Sn0.7)1−ySby (0 ≤ y ≤ 0.04) solid solutions were prepared by a two-step solid-state reaction method combined with the spark plasma sintering technique. Investigations indicate that the Sb doping amount has a significant impact on the thermoelectric properties of Mg2(Si0.3Sn0.7)1−ySby compounds. As the Sb fraction y increases, the electron concentration and electrical conductivity of Mg2(Si0.3Sn0.7)1−ySby first increase and then decrease, and both reach their highest value at y = 0.025. The sample with y = 0.025, possessing the highest electrical conductivity and one of the higher Seebeck coefficient values among all the samples, has the highest power factor, being 3.45 mW m−1 K−2 to 3.69 mW m−1 K−2 in the temperature range of 300 K to 660 K. Meanwhile, Sb doping can significantly reduce the lattice thermal conductivity (κph) of Mg2(Si0.3Sn0.7)1−ySby due to increased point defect scattering, and κph for Sb-doped samples is 10% to 20% lower than that of the nondoped sample for 300 K < T < 400 K. Mg2(Si0.3Sn0.7)0.975Sb0.025 possesses the highest power factor and one of the lower κph values among all the samples, and reaches the highest ZT value: 1.0 at 640 K.

Keywords

Mg2Si0.3Sn0.7 solid-state reaction Sb doping thermoelectric properties 

Copyright information

© TMS 2011

Authors and Affiliations

  • Wei Liu
    • 1
  • Qiang Zhang
    • 1
  • Xinfeng Tang
    • 1
  • Han Li
    • 1
  • Jeff Sharp
    • 2
  1. 1.State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of TechnologyWuhanChina
  2. 2.Marlow Industries, Inc.DallasUSA

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