Journal of Electronic Materials

, Volume 39, Issue 9, pp 1456–1462

Nanostructured Interfaces for Thermoelectrics

  • Y. Gao
  • A. M. Marconnet
  • M. A. Panzer
  • S. LeBlanc
  • S. Dogbe
  • Y. Ezzahri
  • A. Shakouri
  • K. E. Goodson
Article

DOI: 10.1007/s11664-010-1256-7

Cite this article as:
Gao, Y., Marconnet, A.M., Panzer, M.A. et al. Journal of Elec Materi (2010) 39: 1456. doi:10.1007/s11664-010-1256-7

Abstract

Temperature drops at the interfaces between thermoelectric materials and the heat source and sink reduce the overall efficiency of thermoelectric systems. Nanostructured interfaces based on vertically aligned carbon nanotubes (CNTs) promise the combination of mechanical compliance and high thermal conductance required for thermoelectric modules, which are subjected to severe thermomechanical stresses. This work discusses the property require- ments for thermoelectric interface materials, reviews relevant data available in the literature for CNT films, and characterizes the thermal properties of vertically aligned multiwalled CNTs grown on a candidate thermoelectric material. Nanosecond thermoreflectance thermometry provides thermal property data for 1.5-μm-thick CNT films on SiGe. The thermal interface resistances between the CNT film and surrounding materials are the dominant barriers to thermal transport, ranging from 1.4 m2 K MW−1 to 4.3 m2 K MW−1. The volumetric heat capacity of the CNT film is estimated to be 87 kJ m−3 K−1, which corresponds to a volumetric fill fraction of 9%. The effect of 100 thermal cycles from 30°C to 200°C is also studied. These data provide the groundwork for future studies of thermoelectric materials in contact with CNT films serving as both a thermal and electrical interface.

Keywords

Thermal interface materialsthermoelectric modulesthermoreflectance thermometryvertically aligned carbon nanotubessilicon germaniumthermomechanical stress

Nomenclature

cp

Heat capacity, J kg−1 K−1

Cv

Volumetric heat capacity, J m−3 K−1

D

Bond line thickness, μm

feff

Effective fill fraction of CNT film, %

G

Shear modulus, GPa

k

Thermal conductivity, W m−1 K−1

L

Joint length, m

R

Thermal resistivity, m K W−1

R′′

Thermal resistance, m2 K W−1

ΔT

Temperature excursion, K

Greek symbols

α

Thermal expansion coefficient, 10−6 K−1

ρ

Density of CNT, kg m−3

σ

Maximum shear stress, GPa

Subscripts

1

Thermal expansion coefficient of layer 1

2

Thermal expansion coefficient of layer 2

CNT-Pt

Boundary between CNT film and Pt metal layer

CNT-Sub

Boundary between CNT film and substrate

eff

Effective

ind

Individual

tot

Total

Copyright information

© TMS 2010

Authors and Affiliations

  • Y. Gao
    • 1
  • A. M. Marconnet
    • 1
  • M. A. Panzer
    • 1
  • S. LeBlanc
    • 1
  • S. Dogbe
    • 2
  • Y. Ezzahri
    • 3
  • A. Shakouri
    • 3
  • K. E. Goodson
    • 1
  1. 1.Mechanical Engineering DepartmentStanford UniversityStanfordUSA
  2. 2.Stanford Nanofabrication FacilityStanfordUSA
  3. 3.Baskin School of EngineeringUniversity of California at Santa CruzSanta CruzUSA