Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy
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- Yasuda, K., Niraula, M., Oka, H. et al. Journal of Elec Materi (2010) 39: 1118. doi:10.1007/s11664-010-1241-1
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Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented. No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted in highly conductive n-type layers or highly resistive p-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber. Layers grown at 560°C, with a vapor-phase Te/Cd precursor ratio of 3.0, were p-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant supply rate was increased beyond a certain value. On the other hand, layers grown at 325°C with Te/Cd ratios from 0.1 to 0.25 were n-type. A maximum free electron concentration of 1.3 × 1017 cm−3 was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth conditions.