Journal of Electronic Materials

, Volume 39, Issue 7, pp 1118–1123

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

  • K. Yasuda
  • M. Niraula
  • H. Oka
  • T. Yoneyama
  • K. Matsumoto
  • H. Nakashima
  • T. Nakanishi
  • D. Katoh
  • Y. Agata
Article

DOI: 10.1007/s11664-010-1241-1

Cite this article as:
Yasuda, K., Niraula, M., Oka, H. et al. Journal of Elec Materi (2010) 39: 1118. doi:10.1007/s11664-010-1241-1

Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented. No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted in highly conductive n-type layers or highly resistive p-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber. Layers grown at 560°C, with a vapor-phase Te/Cd precursor ratio of 3.0, were p-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant supply rate was increased beyond a certain value. On the other hand, layers grown at 325°C with Te/Cd ratios from 0.1 to 0.25 were n-type. A maximum free electron concentration of 1.3 × 1017 cm−3 was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth conditions.

Keywords

CdTe epilayers halogen doping MOVPE Si substrates radiation detectors 

Copyright information

© TMS 2010

Authors and Affiliations

  • K. Yasuda
    • 1
  • M. Niraula
    • 1
  • H. Oka
    • 1
  • T. Yoneyama
    • 1
  • K. Matsumoto
    • 1
  • H. Nakashima
    • 1
  • T. Nakanishi
    • 1
  • D. Katoh
    • 1
  • Y. Agata
    • 1
  1. 1.Nagoya Institute of Technology, Graduate School of EngineeringNagoyaJapan

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