Article

Journal of Electronic Materials

, Volume 39, Issue 7, pp 1118-1123

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

  • K. YasudaAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , M. NiraulaAffiliated withNagoya Institute of Technology, Graduate School of Engineering Email author 
  • , H. OkaAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , T. YoneyamaAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , K. MatsumotoAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , H. NakashimaAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , T. NakanishiAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , D. KatohAffiliated withNagoya Institute of Technology, Graduate School of Engineering
  • , Y. AgataAffiliated withNagoya Institute of Technology, Graduate School of Engineering

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented. No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted in highly conductive n-type layers or highly resistive p-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber. Layers grown at 560°C, with a vapor-phase Te/Cd precursor ratio of 3.0, were p-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant supply rate was increased beyond a certain value. On the other hand, layers grown at 325°C with Te/Cd ratios from 0.1 to 0.25 were n-type. A maximum free electron concentration of 1.3 × 1017 cm−3 was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth conditions.

Keywords

CdTe epilayers halogen doping MOVPE Si substrates radiation detectors