Journal of Electronic Materials

, Volume 39, Issue 7, pp 857–862

Effect of Hydrogen Free Radicals on Hg1−xCdxTe

Authors

  • J. A. Wilks
    • Department of ChemistryUniversity of North Texas
  • C. M. Tavakoli
    • Department of ChemistryUniversity of North Texas
    • Department of ChemistryUniversity of North Texas
Article

DOI: 10.1007/s11664-010-1222-4

Cite this article as:
Wilks, J.A., Tavakoli, C.M. & Kelber, J.A. Journal of Elec Materi (2010) 39: 857. doi:10.1007/s11664-010-1222-4
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The effects of atomic hydrogen (H) and Br/methanol etching on Hg1−xCdxTe films were investigated using x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Exposure of an as-received Hg1−xCdxTe sample to H + H2 resulted in H-induced TeO2 reduction. The oxide reduction was first order with respect to H + H2 exposure. Exposure to H + H2 after etching the Hg1−xCdxTe film in a Br/methanol solution induced Hg and C depletion. Hg and C removal was also observed after completely reducing the TeO2 on the as-received sample. The removal process was hindered by the formation of a Cd-rich overlayer on both etched and unetched surfaces.

Keywords

Hg1−xCdxTeatomic hydrogenx-ray photoelectron spectroscopyatomic force microscopy

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© TMS 2010