Journal of Electronic Materials

, Volume 39, Issue 7, pp 903–907

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators

  • E. Suarez
  • M. Gogna
  • F. Al-Amoody
  • S. Karmakar
  • J. Ayers
  • E. Heller
  • F. Jain
Article

DOI: 10.1007/s11664-010-1207-3

Cite this article as:
Suarez, E., Gogna, M., Al-Amoody, F. et al. Journal of Elec Materi (2010) 39: 903. doi:10.1007/s11664-010-1207-3

Abstract

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeOx-cladded Ge and SiOx-cladded Si quantum dots (QDs) are self-assembled site-specifically on the II–VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II–VI stack serves both as a tunnel insulator and a high-κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

Keywords

II–VI gate insulators nonvolatile memory quantum dot floating gate ZnS–ZnMgS gate insulator 

Copyright information

© TMS 2010

Authors and Affiliations

  • E. Suarez
    • 1
  • M. Gogna
    • 1
  • F. Al-Amoody
    • 1
  • S. Karmakar
    • 1
  • J. Ayers
    • 1
  • E. Heller
    • 2
  • F. Jain
    • 1
  1. 1.Electrical and Computer Engineering DepartmentUniversity of ConnecticutStorrsUSA
  2. 2.RSoft Design GroupOssiningUSA