Journal of Electronic Materials

, Volume 39, Issue 7, pp 936–944

Electronic and Optical Properties of MgxZn1−xO and BexZn1−xO Quantum Wells

  • Enrico Furno
  • Simone Chiaria
  • Michele Penna
  • Enrico Bellotti
  • Michele Goano
Article

DOI: 10.1007/s11664-010-1163-y

Cite this article as:
Furno, E., Chiaria, S., Penna, M. et al. Journal of Elec Materi (2010) 39: 936. doi:10.1007/s11664-010-1163-y

Abstract

As a preparatory step toward establishing reliable numerical design tools for ZnO-based optoelectronic devices, we have reassessed the available information on material parameters relevant for the simulation of light-emitting diodes (LEDs) with active regions including ZnO, MgZnO, and BeZnO layers. The impact of different approximations for the electronic structure and the interface polarization charge on the optical properties of bulk ZnO and ZnO/MgZnO quantum wells has been evaluated, and a consistent set of parameters has been used not only for systematic comparison of ZnO/MgZnO and ZnO/BeZnO single quantum well structures but also for the first simulation of a realistic ZnO/BeZnO multiple quantum well LED.

Keywords

ZnOMgZnOBeZnOUV LEDsquantum wellsoptical gainspontaneous emissionspontaneous and piezoelectric polarization

Copyright information

© TMS 2010

Authors and Affiliations

  • Enrico Furno
    • 1
    • 2
  • Simone Chiaria
    • 1
  • Michele Penna
    • 1
    • 2
  • Enrico Bellotti
    • 2
  • Michele Goano
    • 1
  1. 1.Dipartimento di ElettronicaPolitecnico di TorinoTorinoItaly
  2. 2.ECE DepartmentBoston UniversityBostonUSA