Journal of Electronic Materials

, Volume 39, Issue 7, pp 930–935

Wafer Mapping Using Deuterium Enhanced Defect Characterization

  • K. Hossain
  • O.W. Holland
  • R. Hellmer
  • B. VanMil
  • L.O. Bubulac
  • T.D. Golding
Article

DOI: 10.1007/s11664-010-1162-z

Cite this article as:
Hossain, K., Holland, O., Hellmer, R. et al. Journal of Elec Materi (2010) 39: 930. doi:10.1007/s11664-010-1162-z

Abstract

Deuterium (as well as other hydrogen isotopes) binds with a wide range of morphological defects in semiconductors and, as such, becomes distributed similarly to those defects. Thus, the deuterium profile within the sample serves as the basis of a technique for defect mapping known as amethyst wafer mapping (AWM). The efficiency of this technique has been demonstrated by evaluation of ion-induced damage in implanted Si, as well as as-grown defects in HgCdTe (MCT) epilayers. The defect tagging or decoration capability of deuterium is largely material independent and applicable to a wide range of defect morphologies. A number of analytical techniques including ion channeling and etch pit density measurements were used to evaluate the AWM results.

Keywords

AWMHgCdTehydrogenationIRFPAdefect tagging

Copyright information

© TMS 2010

Authors and Affiliations

  • K. Hossain
    • 1
  • O.W. Holland
    • 1
  • R. Hellmer
    • 1
  • B. VanMil
    • 1
  • L.O. Bubulac
    • 2
    • 3
  • T.D. Golding
    • 1
  1. 1.Amethyst Research, Inc.ArdmoreUSA
  2. 2.RAND CorporationSanta MonicaUSA
  3. 3.Night Vision and Electronic Sensors Directorate (NVESD)Fort BelvoirUSA