Journal of Electronic Materials

, Volume 39, Issue 7, pp 945–950

Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

Authors

    • Department of Electrical Engineering and Computer ScienceUniversity of Michigan
  • P. Y. Emelie
    • Department of Electrical Engineering and Computer ScienceUniversity of Michigan
  • J. D. Phillips
    • Department of Electrical Engineering and Computer ScienceUniversity of Michigan
  • S. Velicu
    • EPIR Technologies
  • C. H. Grein
    • EPIR Technologies
  • P. S. Wijewarnasuriya
    • US Army Research Laboratory
Article

DOI: 10.1007/s11664-010-1157-9

Cite this article as:
Itsuno, A.M., Emelie, P.Y., Phillips, J.D. et al. Journal of Elec Materi (2010) 39: 945. doi:10.1007/s11664-010-1157-9

Abstract

Controllable p-type doping at low concentrations is desired for multilayer HgCdTe samples in a P+/π/N+ structure due to the promise of suppressing Auger processes, and ultimately reduced dark current for infrared detectors operating at a given temperature. In this study, a series of arsenic implantation and annealing experiments have been conducted to study diffusion at low Hg partial pressure with the goal of achieving effective control over dopant profiles at low concentration. Arsenic dopant profiles were measured by secondary ion mass spectroscopy (SIMS), where diffusion coefficients were extracted with values ranging between 3.35 × 10−16 cm2 s−1 and 6 × 10−14 cm2 s−1. Arsenic diffusion coefficients were found to vary strongly with Hg partial pressure and HgCdTe alloy composition, corresponding to variations in Hg vacancy concentration.

Keywords

ArsenicHgCdTediffusion coefficientlow doping concentrationhigh operating temperatureinfrared detector

Copyright information

© TMS 2010