Journal of Electronic Materials

, Volume 39, Issue 7, pp 981–985

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

Article

DOI: 10.1007/s11664-010-1121-8

Cite this article as:
Hu, W., Chen, X., Ye, Z. et al. Journal of Elec Materi (2010) 39: 981. doi:10.1007/s11664-010-1121-8

Abstract

Resistance–voltage curves of n+-on-p Hg1−xCdxTe infrared photodiodes were measured in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were fitted by an improved simultaneous-mode nonlinear fitting process. Based on the extracted parameters, an efficient numerical sim- ulation approach has been developed by inserting trap-assisted and band-to-band tunneling models into continuity equations as generation–recombination processes. Simulated dark-current characteristics were found to be in good agreement with the experimental data, demonstrating the validity of the nonlinear fitting process. Our work presents an efficient method for dark-current simulations over a wide range of temperatures and bias voltages, which is important for investigating mechanisms of carrier transport across the HgCdTe junction.

Keywords

HgCdTe infrared detector modeling numerical simulation dark current tunneling carrier transport 

Copyright information

© TMS 2010

Authors and Affiliations

  1. 1.National Laboratory for Infrared PhysicsShanghai Institute of Technical Physics, Chinese Academy of SciencesShanghaiChina
  2. 2.School of Electrical, Electronic and Computer EngineeringThe University of Western AustraliaCrawleyAustralia

Personalised recommendations