Journal of Electronic Materials

, Volume 39, Issue 5, pp 526–529

MOS Characteristics of C-Face 4H-SiC

Authors

    • Physics DepartmentAuburn University
  • A.C. Ahyi
    • Physics DepartmentAuburn University
  • X. Zhu
    • Physics DepartmentAuburn University
  • M. Li
    • Physics DepartmentAuburn University
  • T. Isaacs-Smith
    • Physics DepartmentAuburn University
  • J.R. Williams
    • Physics DepartmentAuburn University
  • L.C. Feldman
    • Institute of Advanced Materials, Devices and NanotechnologyRutgers University
Article

DOI: 10.1007/s11664-010-1096-5

Cite this article as:
Chen, Z., Ahyi, A., Zhu, X. et al. Journal of Elec Materi (2010) 39: 526. doi:10.1007/s11664-010-1096-5

Abstract

Metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide–semiconductor (O–S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (Dit). Direct oxidation/passivation in NO yielded somewhat better IV characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O–S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.

Keywords

4H-SiCcarbon faceinterface trapsoxide breakdownchannel mobility

Copyright information

© TMS 2010