Journal of Electronic Materials

, Volume 39, Issue 7, pp 996–1000

Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates

Authors

    • Department of Electrical, Computer and Systems EngineeringRensselaer Polytechnic Institute
  • S. S. Shintri
    • Department of Electrical, Computer and Systems EngineeringRensselaer Polytechnic Institute
  • J. K. Markunas
    • U.S. Army RDECOM CERDEC, NVESD
  • R. N. Jacobs
    • U.S. Army RDECOM CERDEC, NVESD
  • I. B. Bhat
    • Department of Electrical, Computer and Systems EngineeringRensselaer Polytechnic Institute
Article

DOI: 10.1007/s11664-010-1095-6

Cite this article as:
Rao, S.R., Shintri, S.S., Markunas, J.K. et al. Journal of Elec Materi (2010) 39: 996. doi:10.1007/s11664-010-1095-6

Abstract

High-quality (211)B CdTe buffer layers on Si substrates are required to enable Hg1–xCdxTe growth and device fabrication on lattice-mismatched Si substrates. Metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si substrates using Ge and ZnTe interlayers has been achieved. Cyclic annealing has been used during growth of thick CdTe layers in order to improve crystal quality. The best (211)B CdTe/Si films grown in this study display a low x-ray diffraction (XRD) rocking-curve full-width at half-maximum (FWHM) of 85 arcsec and etch pit density (EPD) of 2 × 106 cm−2. These values are the best reported for MOVPE-grown (211) CdTe/Si and are comparable to those for state-of-the-art molecular beam epitaxy (MBE)-grown CdTe/Si.

Keywords

MOVPE(211) orientationCdTesilicongermaniumZnTearsenicthermal cycling
Download to read the full article text

Copyright information

© TMS 2010