Journal of Electronic Materials

, Volume 39, Issue 7, pp 1043–1052

HgCdTe: Recent Trends in the Ultimate IR Semiconductor


DOI: 10.1007/s11664-010-1087-6

Cite this article as:
Kinch, M.A. Journal of Elec Materi (2010) 39: 1043. doi:10.1007/s11664-010-1087-6


Since its introduction in the early 1970s, HgCdTe has become the general workhorse of the global infrared (IR) industry. Despite a significant lack of investment in the basic science of this materials system since 1990, huge advances have been made in HgCdTe focal-plane array (FPA) technology, resulting in the current availability of a wide variety of large-area FPAs, for all IR spectral bands, both monocolor and multicolor, with the capability for both passive and active imaging. The current status of the many technologies relevant to the continued good health of HgCdTe is discussed herein, with regard to both their present limitations and possible opportunities for improvement.


HgCdTe photodiode infrared 

Copyright information

© TMS 2010

Authors and Affiliations

  1. 1.DRS TechnologiesDallasUSA

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