Journal of Electronic Materials

, Volume 39, Issue 7, pp 1019–1022

A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe

  • J. Zhang
  • G. K. O. Tsen
  • J. Antoszewski
  • J. M. Dell
  • L. Faraone
  • W. D. Hu
Article

DOI: 10.1007/s11664-010-1083-x

Cite this article as:
Zhang, J., Tsen, G.K.O., Antoszewski, J. et al. Journal of Elec Materi (2010) 39: 1019. doi:10.1007/s11664-010-1083-x

In order to evaluate the effectiveness of CdTe surface passivating layers, HgCdTe photoconductors with and without CdTe sidewall passivation were fabricated. As expected, photoconductors with CdTe sidewall passivation demonstrated significantly higher responsivity in comparison with those without sidewall passivation, indicating the effectiveness of molecular-beam epitaxially (MBE)-grown CdTe as a passivation layer in reducing surface recombination velocity. Characterization of the responsivity differences between photoconductors with and without sidewall CdTe passivation offers a potential method for measuring the interface/surface recombination velocity. This has been demonstrated in this paper by extracting the value of the surface recombination velocity using the Synopsys Sentaurus commercial modeling package to fit experimental responsivity data for fully and partially passivated devices.

Keywords

Interface effectssurface recombination velocityCdTe passivationHgCdTe photoconductive devicesemiconductor device modeling

Copyright information

© TMS 2010

Authors and Affiliations

  • J. Zhang
    • 1
  • G. K. O. Tsen
    • 1
  • J. Antoszewski
    • 1
  • J. M. Dell
    • 1
  • L. Faraone
    • 1
  • W. D. Hu
    • 2
  1. 1.Microelectronics Research Group, School of Electrical, Electronic and Computer EngineeringThe University of Western AustraliaCrawleyAustralia
  2. 2.National Lab for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina