Journal of Electronic Materials

, Volume 39, Issue 7, pp 1063-1069

First online:

Simulations of Dislocations in CdZnTe/SL/Si Substrates

  • Anthony J. CianiAffiliated withU.S. Army Research Laboratory, Aberdeen Proving Ground Email author 
  • , Peter W. ChungAffiliated withU.S. Army Research Laboratory, Aberdeen Proving Ground

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Discrete dislocation dynamics simulations were employed to study the primary mechanisms by which superlattices (SLs) block threading dislocations (TDs) from reaching the surface of a composite CdZnTe/SL/Si substrate. We found that the difference in strain (composition) across layer boundaries played a key role as to whether a TD might veer away or continue across. We also found that, while the distance between interfaces had little effect on the motion of a single TD, it could have an impact on the dislocation tangle as a whole and should be considered carefully in SL design. We discuss our results in relation to the design of SLs for TD blocking.


Discrete dislocation dynamics superlattice mercury cadmium telluride cadmium zinc telluride cadmium telluride HgCdTe CdZnTe CdTe silicon Si