, Volume 38, Issue 9, pp 1926-1930,
Open Access This content is freely available online to anyone, anywhere at any time.

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

Abstract

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 × 1015 cm−2 to 8.0 × 1015 cm−2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of ~5.0 ×  1014 cm−2. Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 × 1015 cm−2 to 1.0 × 1015 cm−2. At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.