Journal of Electronic Materials

, Volume 38, Issue 6, pp 756–760

Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures

  • Hisashi Masui
  • Samantha C. Cruz
  • Shuji Nakamura
  • Steven P. DenBaars
Open AccessArticle

DOI: 10.1007/s11664-009-0777-4

Cite this article as:
Masui, H., Cruz, S.C., Nakamura, S. et al. Journal of Elec Materi (2009) 38: 756. doi:10.1007/s11664-009-0777-4

Inclined crystallographic planes of the wurtzite structure were investigated in comparison with the zincblende structure in terms of surface geometry characteristics. The ball–stick model indicates that the semipolar \( \left( {1{\bar 1} 01} \right) \) surface possesses a surface polarity resembling the anion polarity, which agrees with the common experimental observations of epitaxial growth preference for the cation-polarity \( \left( {1{\bar 1} 0{\bar 1} } \right) \) surface over the \( \left( {1{\bar 1} 01} \right) \) surface. The wurtzite \( \left\{ {11{\bar 2} 2} \right\} \) surface was found to share geometrical similarities with the zincblende {100} surface uniquely among the possible semipolar planes. This finding encourages epitaxial growth on the \( \left\{ {11{\bar 2} 2} \right\} \) plane of wurtzite semiconductors, e.g., GaN, with the potential of avoiding atomic step formations typically associated with off-axis crystallographic planes.

Keywords

Wurtzitezincblendesemipolar orientationsurface polarity
Download to read the full article text

Copyright information

© The Author(s) 2009

Authors and Affiliations

  • Hisashi Masui
    • 1
  • Samantha C. Cruz
    • 1
  • Shuji Nakamura
    • 1
  • Steven P. DenBaars
    • 1
  1. 1.Solid State Lighting and Energy Center, Materials Department, College of EngineeringUniversity of CaliforniaSanta BarbaraUSA