Journal of Electronic Materials

, Volume 37, Issue 9, pp 1303–1310

Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec

  • Johan Rothman
  • Gwladys Perrais
  • Philippe Ballet
  • L. Mollard
  • S. Gout
  • J.-P. Chamonal
Article

DOI: 10.1007/s11664-008-0449-9

Cite this article as:
Rothman, J., Perrais, G., Ballet, P. et al. Journal of Elec Materi (2008) 37: 1303. doi:10.1007/s11664-008-0449-9

Abstract

In this communication, we report on the electro-optical characterization of planar back-side-illuminated HgCdTe electron initiated avalanche photodiode (e-APD) test arrays with cut-off wavelengths λc = 2.4 μm, λc = 4.8 μm, and λc = 9.2 μm. The e-APDs were manufactured at LETI using absorption layers grown by molecular beam epitaxy (MBE). We present measurements of the distributions in gain, noise, and equivalent input dark current. The mid-wave (MW) diodes yielded a very low dispersion (2%) and high operability (98%) for gains up to M = 200. The excess noise factor and equivalent input current (Ieq_in) operability were slightly lower, due to defects in the depletion region. The lowest measured value of Ieq_in = 1 fA corresponds to the lowest level measured so far in HgCdTe e-APDs and opens the way to new applications. The gain in the long-wave (LW) diodes was limited by tunnelling currents to a value of M = 2.4, associated with an average noise factor F = 1.2. A gain of M = 20 at a bias of −22.5 V was demonstrated in the short-wave (SW) e-APDs.

Keywords

HgCdTeAPDMBESWMWLWgaindispersionsensitivity

Copyright information

© TMS 2008

Authors and Affiliations

  • Johan Rothman
    • 1
  • Gwladys Perrais
    • 1
  • Philippe Ballet
    • 1
  • L. Mollard
    • 1
  • S. Gout
    • 1
  • J.-P. Chamonal
    • 1
  1. 1.CEA/LETI/DOPTGrenoble Cedex 9France