Journal of Electronic Materials

, Volume 37, Issue 9, pp 1460–1464

Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds

  • J.T. Mullins
  • B.J. Cantwell
  • A. Basu
  • Q. Jiang
  • A. Choubey
  • A.W. Brinkman
  • B.K. Tanner
Article

DOI: 10.1007/s11664-008-0442-3

Cite this article as:
Mullins, J., Cantwell, B., Basu, A. et al. Journal of Elec Materi (2008) 37: 1460. doi:10.1007/s11664-008-0442-3

Abstract

The growth of large-area bulk crystals of cadmium telluride and cadmium zinc telluride has been demonstrated using the combination of a novel physical vapor transport growth system and heteroepitaxial seeding on GaAs wafers. X-ray diffraction studies show the resulting material to be of extremely high quality despite the large lattice mismatch between the seed and the grown crystal. This process should provide a reliable growth route for large-area large-volume single-crystal boules of cadmium telluride and cadmium zinc telluride.

Keywords

Cadmium telluride cadmium zinc telluride bulk growth vapor growth heteroepitaxy 

Copyright information

© TMS 2008

Authors and Affiliations

  • J.T. Mullins
    • 1
  • B.J. Cantwell
    • 1
  • A. Basu
    • 1
  • Q. Jiang
    • 2
  • A. Choubey
    • 2
  • A.W. Brinkman
    • 2
  • B.K. Tanner
    • 2
  1. 1.Durham Scientific Crystals Ltd.SedgefieldUK
  2. 2.Department of PhysicsUniversity of DurhamDurhamUK

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