Journal of Electronic Materials

, Volume 35, Issue 4, pp 733–737

Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

Authors

  • Massimo Galluppi
    • Infineon Technologies, Corporate Research
  • Lutz Geelhaar
    • Infineon Technologies, Corporate Research
  • Henning Riechert
    • Infineon Technologies, Corporate Research
Article

DOI: 10.1007/s11664-006-0130-0

Cite this article as:
Galluppi, M., Geelhaar, L. & Riechert, H. Journal of Elec Materi (2006) 35: 733. doi:10.1007/s11664-006-0130-0

Abstract

The band offsets of InGaAsN single quantum well samples with different indium and nitrogen concentrations have been determined by surface photovoltage measurements. With varying indium content in the quantum well, both the conduction and the valence band states are modified. On the other hand, nitrogen content variations affect only the conduction band states and leave the valence band states basically unchanged. In particular, the value of the conduction band offset ratio increases with increasing nitrogen content and decreases with increasing indium concentration. This effect shows the possibility to design structures with a fixed band gap but varied confinement of electrons and holes by changing the In/N ratio.

Key words

Nitridesband offsetsquantum wells

Copyright information

© TMS-The Minerals, Metals and Materials Society 2006