Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements
- Cite this article as:
- Galluppi, M., Geelhaar, L. & Riechert, H. Journal of Elec Materi (2006) 35: 733. doi:10.1007/s11664-006-0130-0
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The band offsets of InGaAsN single quantum well samples with different indium and nitrogen concentrations have been determined by surface photovoltage measurements. With varying indium content in the quantum well, both the conduction and the valence band states are modified. On the other hand, nitrogen content variations affect only the conduction band states and leave the valence band states basically unchanged. In particular, the value of the conduction band offset ratio increases with increasing nitrogen content and decreases with increasing indium concentration. This effect shows the possibility to design structures with a fixed band gap but varied confinement of electrons and holes by changing the In/N ratio.