Special Issue Paper

Journal of Electronic Materials

, Volume 36, Issue 4, pp 426-430

Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes

  • J. B. LimbAffiliated withCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology
  • , W. LeeAffiliated withCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology
  • , J. H. RyouAffiliated withCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology
  • , D. YooAffiliated withCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of TechnologySchool of Materials Science and Engineering, Georgia Institute of Technology
  • , R. D. DupuisAffiliated withCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of TechnologySchool of Materials Science and Engineering, Georgia Institute of Technology Email author 

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We have compared the effects of Mg-doped GaN and In0.04Ga0.96N layers on the electrical and electroluminescence (EL) properties of the green light emitting diodes (LEDs). To investigate the effects of different p-layers on the LED performance, the diode active region structures were kept identical. For LEDs with p-InGaN layers, the p-In0.04Ga0.96N/GaN polarization-related EL peak was dominant at low current levels, while the multiple-quantum-well (MQW) peak became dominant at higher current levels, different from LEDs with p-GaN layers. Also, LEDs with p-InGaN exhibited slightly higher turn on voltages (V on ) and forward voltages (V f ) compared to LEDs with p-GaN layers. However, the MQW related EL intensity was much higher and diode series resistance lower for LEDs with p-InGaN layers compared with LEDs with p-GaN, showing possible improvements in output power for LEDs with p-InGaN layers. The diodes with p-GaN layers typically showed V f of ∼3.1 V at a drive current of 20 mA, with a series resistance of ∼24.7 Ω, while diodes with p-InGaN showed V f of ∼3.2 V, with a series resistance of ∼18.5 Ω, for device dimensions of 230 μm by 230 μm.

Keywords

Light emitting diode (LED) gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD) InGaN