Journal of Electronic Materials

, Volume 34, Issue 3, pp 232–239

Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination

  • L. Hobbs
  • I. Eddie
  • G. Erwin
  • A. C. Bryce
  • R. M. De La Rue
  • J. S. Roberts
  • T. F. Krauss
  • D. W. Mccomb
  • M. Mackenzie
Regular Issue Paper

DOI: 10.1007/s11664-005-0209-z

Cite this article as:
Hobbs, L., Eddie, I., Erwin, G. et al. Journal of Elec Materi (2005) 34: 232. doi:10.1007/s11664-005-0209-z

Abstract

Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.

Key words

AlAsthermal oxidationdelamination

Copyright information

© TMS-The Minerals, Metals and Materials Society 2005

Authors and Affiliations

  • L. Hobbs
    • 1
  • I. Eddie
    • 1
  • G. Erwin
    • 1
  • A. C. Bryce
    • 1
  • R. M. De La Rue
    • 1
  • J. S. Roberts
    • 2
  • T. F. Krauss
    • 3
  • D. W. Mccomb
    • 4
  • M. Mackenzie
    • 5
  1. 1.Department of Electronics and Electrical EngineeringUniversity of GlasgowGlasgowUnited Kingdom
  2. 2.Centre for III–V MaterialsUniversity of SheffieldSheffieldUnited Kingdom
  3. 3.Department of PhysicsUniversity of St. AndrewSt AndrewsUnited Kingdom
  4. 4.Department of MaterialsImperial College LondonLondonUnited Kingdom
  5. 5.Kelvin Nanocharacterisation Centre, Department of Physics and AstronomyUniversity of GlasgowUK