, Volume 32, Issue 3, pp 111-116

InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

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In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding followed by annealing at either 125°C or at 400°C. Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent to thermally grown SiO2-Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures.