Pad effects on material-removal rate in chemical-mechanical planarization
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The role of a porous pad in controlling material-removal rate (MRR) during the chemical-mechanical planarization (CMP) process has been studied numerically. The numerical results are used to develop a phenomenological model that correlates the forces on each individual abrasive particle to the applied nominal pressure. The model provides a physical explanation for the experimentally observed domains of pressure-dependent MRR, where the pad deformation controls the load sharing between active-abrasive particles and direct pad-wafer contact. The predicted correlations between MRR and slurry characteristics, i.e., particle size and concentration, are in agreement with experimentally measured trends reported by Ouma1 and Izumitani.2
- D.O. Ouma (Ph.D. thesis, Massachusetts Institute of Technology, 1998).
- T. Izumitani, Treatise Mater. Sci. Technol. 17, 115 (1979).
- J.M. Steigerwald, S.P. Murarka, and R.J. Gutmann. Chemical Mechanical Planarization of Microelectronic Materials (New York: John Wiley & Sons, Inc., 1997).
- C.W. Kaanta et al., Proc. VMIC Conf. (1991), p. 144.
- H. Kranenberg and P.H. Woerlee, J. Electrochem. Soc. 145, 1285 (1998). CrossRef
- M. Jiang, N. Wood, and R. Komanduri, J. Eng. Mater. Technol. 120, 304 (1998).
- F.W. Preston, J. Soc. Glass Technol. 11, 214 (1927).
- D. Wang, J. Lee, K. Holland, T. Bibby, S. Beaudoin, and T. Cale, J. Electrochem. Soc. 144, 1121 (1997). CrossRef
- W.T. Tseng, J.H. Chin, and L.C. Kang, J. Electrochem. Soc. 146, 1952 (1999). CrossRef
- B. Zhao and F.G. Shi, Int. J. CMP 1, 13 (2000).
- J. Luo and D.A. Dornfeld, IEEE Trans. Semicond. Manuf. 14, 112 (2001). CrossRef
- G. Fu, A. Chandra, S. Guha, and G. Subhash, IEEE Trans. Semicond. Manuf. 14, 406 (2001). CrossRef
- L.J. Gibson and M.F. Ashby, Cellular Solids, 2nd ed. (Cambridge, United Kingdom: Cambridge University Press, 1997).
- The nanoindentation test was carried out by MTS, Inc.
- G. Fu and A. Chandra, submitted to J. Electron. Mater.
- ABAQUS, User Manual, Ver. 6.1, 2001, Pawtucket, RI.
- A.-F. Bastawros, H. Bart-Smith, and A.G. Evans, J. Mech. Phys. Solids 48, 301 (2000). CrossRef
- Y. Ye, R. Biswas, J. Morris, A.-F. Bastawros, and A. Chandra, Chemical-Mechanical Planarization, ed. S.V. Babu, R. Singh, N. Hayasaka, and M. Oliver, MRS Proc. 732E (Pittsburgh, PA: Materials Research Society, 2002), pp. I4.8.1-6.
- W. Che, Y. Guo, A. Bastawros, and A. Chandra, Chemical-Mechanical Planarization, ed. S.V. Babu, R. Singh, N. Hayasaka, and M. Oliver, MRS Proc. 732E (Pittsburgh, PA: Materials Research Society, 2002), pp. I4.3.1-6.
- Pad effects on material-removal rate in chemical-mechanical planarization
Journal of Electronic Materials
Volume 31, Issue 10 , pp 1022-1031
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- Chemical-mechanical planarization
- material-removal rate
- porous pad
- abrasive particle
- asperity contact
- Industry Sectors