Journal of Electronic Materials

, Volume 31, Issue 10, pp 1022–1031

Pad effects on material-removal rate in chemical-mechanical planarization

  • Ashraf Bastawros
  • Abhijit Chandra
  • Yongjin Guo
  • Bo Yan
Special Issue Paper

DOI: 10.1007/s11664-002-0038-2

Cite this article as:
Bastawros, A., Chandra, A., Guo, Y. et al. Journal of Elec Materi (2002) 31: 1022. doi:10.1007/s11664-002-0038-2

Abstract

The role of a porous pad in controlling material-removal rate (MRR) during the chemical-mechanical planarization (CMP) process has been studied numerically. The numerical results are used to develop a phenomenological model that correlates the forces on each individual abrasive particle to the applied nominal pressure. The model provides a physical explanation for the experimentally observed domains of pressure-dependent MRR, where the pad deformation controls the load sharing between active-abrasive particles and direct pad-wafer contact. The predicted correlations between MRR and slurry characteristics, i.e., particle size and concentration, are in agreement with experimentally measured trends reported by Ouma1 and Izumitani.2

Key words

Chemical-mechanical planarizationmaterial-removal rateporous padabrasive particleasperity contact

Copyright information

© TMS-The Minerals, Metals and Materials Society 2002

Authors and Affiliations

  • Ashraf Bastawros
    • 1
  • Abhijit Chandra
    • 2
  • Yongjin Guo
    • 2
  • Bo Yan
    • 1
  1. 1.Department of Aerospace Engineering and Engineering MechanicsIowa State UniversityAmes
  2. 2.Department of Mechanical EngineeringIowa State UniversityUSA