Journal of Electronic Materials

, Volume 29, Issue 6, pp 718–722

Wurtzite CdS on CdTe grown by molecular beam epitaxy

Authors

  • P. Boieriu
    • Physics Department (M/C 273)University of Illinois at Chicago
  • R. Sporken
    • Physics Department (M/C 273)University of Illinois at Chicago
    • Laboratoire Interdisciplinaire de Spectroscopie ElectroniqueFacultés Universitaires Notre-Dame de la Paix
  • Yan Xin
    • Physics Department (M/C 273)University of Illinois at Chicago
  • N. D. Browning
    • Physics Department (M/C 273)University of Illinois at Chicago
  • S. Sivananthan
    • Physics Department (M/C 273)University of Illinois at Chicago
Special Issue Paper

DOI: 10.1007/s11664-000-0212-3

Cite this article as:
Boieriu, P., Sporken, R., Xin, Y. et al. Journal of Elec Materi (2000) 29: 718. doi:10.1007/s11664-000-0212-3

Abstract

Growth of single crystal wurtzite cadmium sulfide on CdTe(111)B substrates has been achieved using molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) indicates smooth surface morphology for several hundreds of nanometers after nucleation. X-ray diffraction measurements confirm the crystalline orientation to be [0001] in the growth direction. X-ray photoelectron spectroscopy (XPS) indicates mostly stoichiometric CdS layers and the existence of a reaction at the interface. Sulfur incorporation into CdTe for various S fluxes has been investigated by Auger electron spectroscopy (AES). High-resolution TEM images of the interface between such epilayers were recorded. During the growth In was used as an in-situ dopant. The concentration and uniformity of In was determined by secondary ion mass spectrometry. Indium profiles were obtained for concentrations ranging from 5 × 1017 to 1.4 × 1021 cm−3. The experimental concentration agrees well with the variation expected from the In flux.

Key words

Cadmium sulfideAuger electron spectroscopyXPSSIMSII-VI heterostructuresMBE

Copyright information

© TMS-The Minerals, Metals and Materials Society 2000