Journal of Electronic Materials

, Volume 29, Issue 1, pp 80–85

(Al)GaInP multiquantum well LEDs on GaAs and Ge

  • P. Modak
  • M. D’Hondt
  • P. Mijlemans
  • I. Moerman
  • P. van Daele
  • P. Demeester
Special Issue Paper

DOI: 10.1007/s11664-000-0099-z

Cite this article as:
Modak, P., D’Hondt, M., Mijlemans, P. et al. Journal of Elec Materi (2000) 29: 80. doi:10.1007/s11664-000-0099-z

Abstract

MOVPE growth of AlGaInP layers on GaAs and Ge have been demonstrated. The surface morphology of the epilayers was smooth under optimized growth conditions. The epilayers showed good PL intensity on both GaAs and Ge substrates. It has been observed that at room temperature the PL intensity drops in the first few seconds after excitation and attains a steady state. The Zn-doped AlGaInP did not show any signs of H-passivation. The MQW LEDs on both the substrates produced electroluminescence which increased with applied current. Results indicate the feasibility of AlGaInP LEDs on Ge.

Key words

GaAs Ge MOVPE AlGaInP 

Copyright information

© TMS-The Minerals, Metals and Materials Society 2000

Authors and Affiliations

  • P. Modak
    • 1
  • M. D’Hondt
    • 1
    • 2
  • P. Mijlemans
    • 2
  • I. Moerman
    • 1
  • P. van Daele
    • 1
  • P. Demeester
    • 1
  1. 1.Department of Information TechnologyUniversity of Gent/IMECGentBelgium
  2. 2.Union Minière-Advanced Materials/Venture UnitOlenBelgium

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