Journal of Electronic Materials

, 29:565

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Authors

  • D. B. Janes
    • School of Electrical and Computer EngineeringPurdue University
  • Takhee Lee
    • Department of PhysicsPurdue University
  • Jia Liu
    • School of Chemical EngineeringPurdue University
  • M. Batistuta
    • School of Electrical and Computer EngineeringPurdue University
  • Nien-Po Chen
    • Department of PhysicsPurdue University
  • B. L. Walsh
    • School of Electrical and Computer EngineeringPurdue University
  • R. P. Andres
    • School of Chemical EngineeringPurdue University
  • E. -H. Chen
    • School of Electrical and Computer EngineeringPurdue University
    • NSF MRSEC for Technology Enabling Heterostructure MaterialsPurdue University
  • M. R. Melloch
    • School of Electrical and Computer EngineeringPurdue University
    • NSF MRSEC for Technology Enabling Heterostructure MaterialsPurdue University
  • J. M. Woodall
    • School of Electrical and Computer EngineeringPurdue University
    • NSF MRSEC for Technology Enabling Heterostructure MaterialsPurdue University
  • R. Reifenberger
    • Department of PhysicsPurdue University
Special Issue Paper

DOI: 10.1007/s11664-000-0046-z

Cite this article as:
Janes, D.B., Lee, T., Liu, J. et al. Journal of Elec Materi (2000) 29: 565. doi:10.1007/s11664-000-0046-z
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Abstract

We report a fabrication approach in which we combine self-assembled metal/molecule nanostructures with chemically stable semiconductor surface layers. The resulting structures have well controlled dimensions and geometries (∼4 nm Au nanoclusters) provided by the chemical self-assembly and have stable, low-resistance interfaces realized by the chemically stable semiconductor cap layer (low-temperature grown GaAs passivated by the organic tether molecules). Scanning tunneling microscope imaging and current-voltage spectroscopy of nanocontacts ton-GaAs fabricated using this approach indicate high quality, ohmic nanocontacts having a specific contact resistance of ∼1 × 10−7Ω·cm2 and a maximum current density of ∼1×107 A/cm2, both comparable to those observed in large area contacts. Uniform 2-D arrays of these nanocontact structures have been fabricated and characterized as potential cells for nanoelectronic device applications.

Key words

Self-assemblynanoclusterohmic contactGaAsSTM
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© TMS-The Minerals, Metals and Materials Society 2000