Special Issue Paper

Journal of Electronic Materials

, 29:565

First online:

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

  • D. B. JanesAffiliated withSchool of Electrical and Computer Engineering, Purdue University
  • , Takhee LeeAffiliated withDepartment of Physics, Purdue University
  • , Jia LiuAffiliated withSchool of Chemical Engineering, Purdue University
  • , M. BatistutaAffiliated withSchool of Electrical and Computer Engineering, Purdue University
  • , Nien-Po ChenAffiliated withDepartment of Physics, Purdue University
  • , B. L. WalshAffiliated withSchool of Electrical and Computer Engineering, Purdue University
  • , R. P. AndresAffiliated withSchool of Chemical Engineering, Purdue University
  • , E. -H. ChenAffiliated withSchool of Electrical and Computer Engineering, Purdue UniversityNSF MRSEC for Technology Enabling Heterostructure Materials, Purdue University
  • , M. R. MellochAffiliated withSchool of Electrical and Computer Engineering, Purdue UniversityNSF MRSEC for Technology Enabling Heterostructure Materials, Purdue University
    • , J. M. WoodallAffiliated withSchool of Electrical and Computer Engineering, Purdue UniversityNSF MRSEC for Technology Enabling Heterostructure Materials, Purdue University
    • , R. ReifenbergerAffiliated withDepartment of Physics, Purdue University

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Abstract

We report a fabrication approach in which we combine self-assembled metal/molecule nanostructures with chemically stable semiconductor surface layers. The resulting structures have well controlled dimensions and geometries (∼4 nm Au nanoclusters) provided by the chemical self-assembly and have stable, low-resistance interfaces realized by the chemically stable semiconductor cap layer (low-temperature grown GaAs passivated by the organic tether molecules). Scanning tunneling microscope imaging and current-voltage spectroscopy of nanocontacts ton-GaAs fabricated using this approach indicate high quality, ohmic nanocontacts having a specific contact resistance of ∼1 × 10−7Ω·cm2 and a maximum current density of ∼1×107 A/cm2, both comparable to those observed in large area contacts. Uniform 2-D arrays of these nanocontact structures have been fabricated and characterized as potential cells for nanoelectronic device applications.

Key words

Self-assembly nanocluster ohmic contact GaAs STM