, Volume 41, Issue 5, pp 1191-1195,
Open Access This content is freely available online to anyone, anywhere at any time.
Date: 16 Jun 2009

X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B

Abstract

We present a high-resolution X-ray diffraction pattern of periodic GaAs nanorod (NR) ensembles and individual GaAs NRs grown catalyst-free throughout a prepatterned amorphous SiN x mask onto GaAs[111]B surfaces. The experiments were performed at a home laboratory using synchrotron radiation in combination with a micron-sized beam prepared by compound refractive lenses. The structural properties were probed by measuring RSMs (q x , q z ) in the vicinity of GaAs(111) and (222) reflections. Besides the GaAs substrate peak, we found a second peak referring to NRs with lattice mismatch of 0.23 pct with respect to the substrate, probably caused by structural defects. The lateral periodicity of NRs was probed by q x scans, and the NR height obtained from the width of the diffraction curve along q z . Grazing-incidence in-plane diffraction revealed the appearance of small crystallites of cubic γ-Si3N4 caused by recrystallization of SiN x during NR growth. Whereas measurements at the home diffractometer provided average structure parameters, the micron-sized X-ray beam experiment was used to probe the parameters at individual NRs.

This article is based on a presentation given in the symposium entitled “Neutron and X-Ray Studies for Probing Materials Behavior,” which occurred during the TMS Spring Meeting in New Orleans, LA, March 9–13, 2008, under the auspices of the National Science Foundation, TMS, the TMS Structural Materials Division, and the TMS Advanced Characterization, Testing, and Simulation Committee.
An erratum to this article can be found at http://dx.doi.org/10.1007/s11661-009-9972-4