Structure and properties of TiB2 thin films deposited at low temperatures using RF magnetron sputtering

  • Wei Dai (戴伟)
  • Tongjun Zhang (张同俊)
  • Junyou Yang
  • Rongxing Sun
  • Juliang Xu
Article

DOI: 10.1007/s11595-007-5666-1

Cite this article as:
Dai, W., Zhang, T., Yang, J. et al. J. Wuhan Univ. Technol.-Mat. Sci. Edit. (2008) 23: 666. doi:10.1007/s11595-007-5666-1

Abstract

The TiB2 thin films were deposited on steel substrates using RF magnetron sputtering technique with the low normalized substrate temperature (0.1<Ts/Tm<0.2). Microstructure of these films was obtained by field emission scanning electron microscope (FESEM) and the grazing incidence X-ray diffraction (GIXRD) characterization, while the composition of films was obtained using Auger emission spectroscopy (AES) analysis. It was found that the TiB2 thin films were overstoichiometric with the B/Ti ratio at 2.33 and the diffusion of Ti and B atoms on the substrate surface was greatly improved at 350 °C. Moreover, a new dense structure, named “equiaxed” grain structure was observed by FESEM at this substrate temperature. Combined with FESEM and AES analysis, it was suggested that the “equiaxed” grain structure was located in Zone 2 at the normalized substrate temperature as low as 0.18.

Key words

TiB2 thin films structure zones 1,2,T equiaxed structure superhard coating auger electron spectroscopy 

Copyright information

© Wuhan University of Technology and Springer-Verlag GmbH 2008

Authors and Affiliations

  • Wei Dai (戴伟)
    • 1
  • Tongjun Zhang (张同俊)
    • 1
  • Junyou Yang
    • 1
  • Rongxing Sun
    • 1
  • Juliang Xu
    • 2
  1. 1.State Key Lab of Material Processing and Die & Mould TechnologyHuazhong University of Science and TechnologyWuhanChina
  2. 2.State Key Laboratory Breeding Base of Refractories and CeramicsWuhan University of Science and TechnologyWuhanChina

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