Frontiers of Physics in China

, Volume 1, Issue 1, pp 112–116

Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

  • Wang Rui-min 
  • Chen Guang-de 
  • Lin J. -Y. 
  • Jiang H. -X. 
Research Article

DOI: 10.1007/s11467-005-0007-3

Cite this article as:
Wang, R., Chen, G., Lin, J.Y. et al. Front. Phys. China (2006) 1: 112. doi:10.1007/s11467-005-0007-3

Abstract

The Raman spectra of unintentionally doped gallium nitride (GaN) and Mg-doped GaN films were investigated and compared at room temperature and low temperature. The differences of E2 and A1(LO) mode in two samples are discussed. Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced misfit dislocation and electron–phonon interaction are the possible origins. A peak at 247 cm−1 is observed in both the Raman spectra of GaN and Mg-doped GaN. Temperature-dependent Raman scattering experiment of Mg-doped GaN shows the frequency and intensity changes of this peak with temperature. This peak is attributed to the defect-induced vibrational mode.

Keywords

GaN P-type GaN Raman scattering defect modes 

PACS numbers

63.20.Pw 78.30.Fs 

Copyright information

© Higher Education Press and Springer-Verlag 2006

Authors and Affiliations

  • Wang Rui-min 
    • 1
  • Chen Guang-de 
    • 1
  • Lin J. -Y. 
    • 2
  • Jiang H. -X. 
    • 2
  1. 1.School of ScienceXi'an Jiaotong UniversityXi'anChina
  2. 2.Department of PhysicsKansas State UniversityKSUSA

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