Letter High-Energy Physics

Chinese Science Bulletin

, Volume 57, Issue 27, pp 3556-3559

Open Access This content is freely available online to anyone, anywhere at any time.

An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene

  • ZeSong WangAffiliated withKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University
  • , ZaoDi ZhangAffiliated withKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University
  • , Rui ZhangAffiliated withKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University
  • , ShiXu WangAffiliated withKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University
  • , DeJun FuAffiliated withKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University Email author 
  • , JiaRui LiuAffiliated withKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan UniversityTexas Center for Superconductivity, University of Houston

Abstract

We developed a cluster ion beam system that produces negative cluster beams of C1–C10 with ion current of 4.5 nA-50 μA at extraction voltages ranging from 6 to 20 kV. The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder. Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration. Small carbon clusters C2 and C4 were implanted into Ni/SiO2/Si substrates and following post-thermal treatment graphene was obtained. Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2–3 layers of graphene. The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.

Keywords

ultralow energy cluster beam negative ion ultrashallow implantation grapheme Raman scattering