Chinese Science Bulletin

, Volume 57, Issue 22, pp 2872–2878

Interface dipole engineering in metal gate/high-k stacks

Authors

    • Department of PhysicsBeihang University
  • XiaoHu Zheng
    • Department of PhysicsBeihang University
  • ZhiSong Xiao
    • Department of PhysicsBeihang University
  • Mei Wang
    • Department of PhysicsBeihang University
  • ZengFeng Di
    • Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences
  • Paul K. Chu
    • Department of Physics and Materials ScienceCity University of Hong Kong
Open AccessReview Condensed Matter Physics

DOI: 10.1007/s11434-012-5289-6

Cite this article as:
Huang, A., Zheng, X., Xiao, Z. et al. Chin. Sci. Bull. (2012) 57: 2872. doi:10.1007/s11434-012-5289-6

Abstract

Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering (IDE) is an effective method to improve the performance, particularly, modulating the effective work function (EWF) of metal gates. Because of the different electronegativity of the various atoms in the interfacial layer, a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack. This paper reviews the interface dipole formation induced by different elements, recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation, and mechanism of IDE.

Keywords

high-k dielectricsmetal gateinterface dipoleMOS stackeffective work function
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Copyright information

© The Author(s) 2012