Chinese Science Bulletin

, 56:3178

Advancements in organic nonvolatile memory devices

Authors

  • Xin Liu
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
    • School of Electronic and Information EngineeringAnhui University
  • ZhuoYu Ji
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
  • LiWei Shang
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
  • DongMei Li
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
  • YueHua Dai
    • School of Electronic and Information EngineeringAnhui University
Open AccessReview Semiconductor Technology

DOI: 10.1007/s11434-011-4695-5

Cite this article as:
Liu, X., Ji, Z., Liu, M. et al. Chin. Sci. Bull. (2011) 56: 3178. doi:10.1007/s11434-011-4695-5

Abstract

As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.

Keywords

organic memorytwo-terminal memory devicesorganic thin-film transistorsintegrationmultilevel effect
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© The Author(s) 2011

Open Access This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution and reproduction in any medium, provided the original author(s) and source are credited.