Chinese Science Bulletin

, 56:1325

Nonvolatile memory devices based on organic field-effect transistors

Authors

  • Hong Wang
    • School of Physics Science and TechnologyLanzhou University
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
    • School of Physics Science and TechnologyLanzhou University
  • ZhuoYu Ji
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
  • Ming Liu
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
  • LiWei Shang
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
  • XingHua Liu
    • Laboratory of Nanofabrication and Novel Device Integration, Institute of MicroelectronicsChinese Academy of Sciences
Open AccessReview Materials Science

DOI: 10.1007/s11434-010-4240-y

Cite this article as:
Wang, H., Peng, Y., Ji, Z. et al. Chin. Sci. Bull. (2011) 56: 1325. doi:10.1007/s11434-010-4240-y

Abstract

Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed.

Keywords

organic nonvolatile memory organic field-effect transistors floating gate ferroelectric organic electret

Copyright information

© The Author(s) 2011

Open Access This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution and reproduction in any medium, provided the original author(s) and source are credited.