, Volume 55, Issue 12, pp 2434-2438

Simulation of a new style vertical HVPE system

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Abstract

In this paper, we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT. In order to find the best parameter on the growth rate of Gallium nitride (GaN), we change the distance between the inlet and the substrate, GaCl and NH3 inlets, and also we add substrate rotation, separately. With the increase of the distance between the substrate and the gas inlet, GaN deposition rate decreases and the uniformity becomes better. The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy (HVPE) system is 4 cm. Besides, as the distance between the GaCl inlet and the NH3 inlet changes, the uniformity of GaN deposition varies. Our findings indicate that the optimal distance is 3 cm. Furthermore, it is found that substrate rotation also affects the growth rate of GaN.