Science China Physics, Mechanics and Astronomy

, Volume 54, Issue 1, pp 102–105

The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

  • Jian Sun
  • Qian Dai
  • FengJuan Liu
  • HaiQin Huang
  • ZhenJun Li
  • XiQing Zhang
  • YongSheng Wang
Research Paper

DOI: 10.1007/s11433-010-4203-y

Cite this article as:
Sun, J., Dai, Q., Liu, F. et al. Sci. China Phys. Mech. Astron. (2011) 54: 102. doi:10.1007/s11433-010-4203-y

Abstract

We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering. Optical and structural properties of the thin films were characterized using various techniques. At 6 V bias, a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained, and this responsibility dropped quickly and reached the noise floor in the visible region. Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.

Keywords

ultraviolet photodetector ZnO:Al photoconductive detector ZnO 

Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • Jian Sun
    • 1
  • Qian Dai
    • 1
  • FengJuan Liu
    • 1
  • HaiQin Huang
    • 1
  • ZhenJun Li
    • 1
  • XiQing Zhang
    • 1
  • YongSheng Wang
    • 1
  1. 1.Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opto-electronic TechnologyBeijing Jiaotong UniversityBeijingChina